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Schottky Barrier Diodes (SBD) MA3D798 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 9.9 0.3 4.6 0.2 15.0 0.5 I Features * TO-220D package * Allowing to rectify under (IF(AV) = 20 A) condition * Cathode common dual type * Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A) 3.2 0.1 13.7 0.2 4.2 0.2 1.4 0.2 1.6 0.2 0.8 0.1 2.54 0.3 3 5.08 0.5 3.0 0.5 2.9 0.2 2.6 0.1 0.55 0.15 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 30 20 120 -40 to +125 -40 to +125 Unit V A A C C 1 2 1 : Anode 2 : Cathode (common) 3 : Anode TO-220D package Note) * : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) High voltage rectification Symbol IR VF Rth(j-c) VR = 30 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 0.47 3 Unit mA V C/W Note) Rated input/output frequency: 150 MHz 1 MA3D798 IF V F 102 Ta = 125C 75C 25C - 20C 103 Schottky Barrier Diodes (SBD) IR V R 102 IR Ta VR = 30 V 20 V 10 V 10 102 Reverse current IR (mA) Reverse current IR (mA) Ta = 125C 10 Forward current IF (A) 1 10 75C 1 1 10-1 10-1 10-2 10-1 25C 10-2 10-3 0 0.2 0.4 0.6 0.8 1.0 1.2 10-2 0 10 20 30 40 50 60 10-3 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) VF Ta 0.8 0.7 Forward voltage VF (V) 0.6 0.5 0.4 0.3 5A 0.2 0.1 0 -40 1A IF = 10 A 0 40 80 120 160 200 Ambient temperature Ta (C) 2 |
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